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Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology | 論文
- Effect of Hydrogen Partial Pressure on the Reliability Characteristics of Ultrathin Gate Oxide
- DC Characterization of Metamorphic InP/InGaAs Heterojunction Bipolar Transistors at Elevated Temperature
- Studies on the Degradation of InP/InGaAs/InP Double Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation
- Low Resistance and Thermally Stable Pt/W/Au Ohmic Contacts to P-Type GaN
- High Quality Nonalloyed Pt Ohmic Contacts to P-Type GaN Using Various Surface Treatment
- Investigation into the Role of Low-Temperature GaN in n-GaN/InGaN/p-GaN Double-Heterostructure Light-Emitting Diodes
- The Effect of RF Power on the Electrochromic Response Time of Sputter-Deposited Ni Oxide Films : Atoms, Molecules, and Chemical Physics
- The Effect of Ar/O_2 Ratio on Electrochromic Response Time of Ni Oxides Grown Using an RF Sputtering System : Atoms, Molecules, and Chemical Physics
- Electrical and Structural Properties of Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Metal Oxide Semiconductor Gate Dielectric Applications
- Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance-Voltage Analysis
- Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Senliconductor Device : Semiconductors
- A Flash-lamp-Pumped Nd : YAG Laser with Dual-Telescopic Optics Configuration
- Femtosecond Self-Mode-Locked La_MgNd_xAl_O_ Laser Pumped by a Laser Diode
- Analysis of Bending Creep Behavior of Silicon Nitride Ceramics at Elevated Temperature
- Ultrathin Nitrided-Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Gate Dielectrics Application
- Electrical Characteristics of TiO_2/ZrSi_xO_y Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications : Semiconductors
- Electrical Characteristics of ZrO_2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications
- Electrical and Reliability Characteristics of an Ultrathin TaO_xN_y Gate Dielectric Prepared by O_3 Annealing
- High Quality Ultrathin TaO_xN_y Gate Dielectric Prepared by Nitridation of Ta_2O_5
- Extracting the Oxide Capacitance Using Inductance -Capacitance-Resistance Meter Measurement on Metal-Oxide-Semiconductor Capacitors : Semiconductors