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Department Of Materials Science And Engineering Hanyang University | 論文
- Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
- Work function tunability of bilayer metal gate electrode (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Work function tunability of bilayer metal gate electrode (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In_2O_3 Nano-Particles Embedded in Polyimide Insulator
- Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)
- Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability
- Characterization of Nano-Floating Gate Memory with ZnO Nanoparticles Embedded in Polymeric Matrix
- Contact Resistance of the Chip-on-Glass Bonded 48Sn-52In Solder Joint
- White Lighting Upconversion in Tm^/Ho^/Yb^ Co-Doped CaWO_4