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Department Of Electronic Information And Energy Engineering Graduate School Of Eng. Osaka University | 論文
- Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon
- Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si
- Boron Accumulation in the {311} Defect Region Induced by Self-Implantation into Silicon Substrate
- Impact Excitation of Carriers in Diamond under Extremely High Electric Fields
- Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
- Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability
- A Study of Pre-Breakdown in Ultra-Thin Silicon Dioxide Films Using Carrier Separation Measurement
- Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
- Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
- Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs : Effects of Substrate Impurity(the IEEE International Coference on SISPAD '02)
- New Nondestructive Carrier Profiling for Ion Implanted Si Using Infrared Spectroscopic Ellipsometry
- Two-Dimensional Simulation of Quantum Tunneling across Barrier with Surface Roughness