スポンサーリンク
Department Of Electronic Engineering Kohgakuin University | 論文
- Stable Single-Longitudinal-Mode Operation over Wide Temperature Range on Semiconductor Lasers with a Short External Cavity
- Tensile Strain Introduced in AlN Layer Grown by Metal-Organic Vapor-Phase Epitaxy on (0001) 6H-SiC with (GaN/AlN) Buffer
- Theoretical Gain of Quantum-Well Wire Lasers
- Sub-100 nm Patterning of GaAs Using In Situ Electrom Beam Lithography
- Photoluminescence Study of Electron-Beam-Induced Damage in GaAs/AlGaAs Quantum-Well Structures
- Role of an Electron Beam in the Modification of a GaAs Oxide Mask for in situ EB Lithography
- Measurement of Effective Refractive Index of GaInAsP Grown on (100) GaAs by LPE
- Ga_xIn_As_yP_/Ga_x'In_1-x'>As_y'P_<1-y'> DH Visible Injection Lasers Lattice Matched with (100) GaAs
- GaInAsP/InP Surface Emitting Injection Lasers
- Photoproduction of Positive and Negative Pions from Protons in the Energy Range from 710 MeV to 950 MeV
- Photoproduction of Negative Pions from Carbon in the Engrgy Range between 510 MeV and 750 MeV
- Differential Cross Sections for Single Pion Photoproduction from Protons in the Energy Range between 500 MeV and 930 MeV
- Constitutive Activation of c-kit by the Juxtamembrane but Not the Catalytic Domain Mutations Is Inhibited Selectively by Tyrosine Kinase Inhibitors STI571 and AG1296
- Violet and Near-UV Light Emission from GaN/Al_Ga_N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy
- GaInAsP/InP Single Quantum-Well Lasers by OMVPE
- Conditions for OMVPE Growth of GaInAsP/InP Crystal
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3μm Wavelength
- Fine Epitaxial Growth of Monolayer-Stepped GaInAs/InP Quantum Wells by Metalorganic Molecular Beam Epitaxy
- Temperature Characteristics of a GaAs-AlGaAs Integerated Twin Guide Laser with Distributed Bragg Reflectors