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Department Of Electronic Engineering Faculty Of Engineering Yamanashi University | 論文
- Effects of Driving Frequency on the Translational Temperature and Absolute Density of Si Atoms in Very High Frequency Capacitively Coupled SiF4 Plasmas
- Structural Properties of Epitaxial ZnS on Ge Substrates
- Temperature Dependence of Carrier Concentration, Resistivity, and Hall Mobility in Te-Doped In_Ga_xP
- Hall Mobility of Te-Doped In_Ga_xP at 300 K
- Ion Spectroscopy of Vibrational and Vibronic Excitation in He^+-O_2 Collisions
- Ion Energy-Loss Spectroscopy of Kr^-He and -Ne Collisions.I.Transitions among ^3P_2,^3P_1,^3P_0,^1D_2 and ^1S_0 of Kr^
- Toward Epitaxial Growth of CuGaS_2 on GaAs(001) Substrates by Chloride Chemical Vapor Deposition
- Low Pressure Vapor Phase Epitaxy of High Purity ZnSe Using Metallic Zinc and Selenium as Source Materials
- Backscattering of keV Protons from Diamond Lattices
- Study of Low Energy Charge Transfer Reactions of Metastable Ar Ions with Ar, Kr and Xe Atoms by Time-of-Flight Technique
- Low Energy Ion-Neutral Reactions. V. O_2^++NO, N_2^++NO, CO^++NO, N_2^++O_2, CO_2^++O_2, CO^++O_2 and N_2^++CO
- Growth of High-Quality ZnSe Layers in Hydrogen Plasma
- Low Energy Ion-Neutral Reactions. IV. : Formation of NO^+ and N^+_2 in O^++N_2 Collisions
- Vapor Phase Epitaxial Growth of ZnSe Using Zinc and Selenium as Source Materials
- Anisotropy of Photovoltaic Properties of Au-CdSnP_2 Diodes : III-1: II-VI COMPOUND SOLAR CELLS
- Diffusion-weighted Imaging of a Malignant Brenner Tumor
- Chemical Vapor Deposition of CuGaS_2 Using Chloride Sources
- Epitaxial Growth of ZnS by Zn-S-H_2 CVD Method
- Study on the Absolute Density and Translational Temperature of Si Atoms in Very High Frequency Capacitively Coupled SiH4 Plasma with Ar, N2, and H2 Dilution Gases
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