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Department Of Electronic Engineering Chang Gung University | 論文
- Observation of Transient Enhanced Diffusion in B^+-Implanted Si by Buried Boron Isotopes
- Effect of Multiquantum Barriers on Carrier Transport Mechanism of InGaN/GaN Multiple Quantum Well Light-emitting Diodes
- Anomalous Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-emitting Diodes with Electron Tunneling Layer
- Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes (Special issue: Solid state devices and materials)
- Enhancement of Carrier Confinement by the Multiquantum Barriers in Blue InGaN/GaN Multiple Quantum Well Light-emitting Diodes
- Lyapunov-Based Error Estimations of MIMO Interconnect Reductions by Using the Global Arnoldi Algorithm(Analog Circuit Techniques and Related Topics)
- On the Equivalent of Structure Preserving Reductions Approach and Adjoint Networks Approach for VLSI Interconnect Reductions(Analog Circuit Techniques and Related Topics)
- The Multiple Point Global Lanczos Method for Multiple-Inputs Multiple-Outputs Interconnect Order Reductions(Modelling, Systems and Simulation,Nonlinear Theory and its Applications)
- MIMO Interconnects Order Reductions by Using the Multiple Point Adaptive-Order Rational Global Arnoldi Algorithm(Analog Circuit and Device Technologies)
- An Adjoint Network Approach for RLCG Interconnect Model Order Reductions( Analog Circuit Techniques and Related Topics)
- Moment Computations of Distributed Coupled RLC Interconnects with Applications to Estimating Crosstalk Noise(CAD, Analog Circuit and Device Technologies)
- Applications of Tree/Link Partitioning for Moment Computations of General Lumped R(L)C Interconnect Networks with Multiple Resistor Loops(Physical Design)(VLSI Design and CAD Algorithms)
- The Observation of Anomalous Optical Berthelot-type Behaviors in Quaternary AlInGaN Semiconductor Heterosystems
- TiO_2 nanocrystal prepared by ALD system at elevated temperature
- Work Function Adjustment by Nitrogen Incorporation in HfN Gate Electrode
- Full Range Work Function Modulation by Nitrogen Incorporation in Hf-Mo Binary Alloys Gate Electrode
- Effects of Post CF_4 Plasma Treatment on the HfO_2 Thin Film
- Hysteresis Phenomenon Improvements of HfO_2 by CF_4 Plasma Treatment
- pH Sensing Performance and Electrical Characterization on Hafnium Oxide Gate ISFETs with Single and Dual Stack Insulator by RF Sputtering
- Novel inorganic pH-insensitive membrane prepared by post N_2O plasma treatment on conventional Si_3N_4/SiO_2 stack layer for REFET application