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Department Of Electrical Engineering National Central University | 論文
- Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
- High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
- Effects of N_2O-Plasma Treatment of a-SiO_xN_y/a-SiN_x Gate Insulators on Electrical Stability of a-Si:H Thin-Film Transistors
- Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface
- Increased survival in experimental rat heatstroke by continuous perfusion of interleukin-1 receptor antagonist
- Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
- 2× Zoom Ratio Telecentric Projector Lens Design for 1080P High Definition Television with Minimum 8000K Color Temperature
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
- Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Very low voltage operation of p-Si/Al_2O_3/HfO_2/TiO_2/Al_2O_3/Pt single quantum well flash memory devices with good retention
- Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
- Multi-Gigabit Pre-Emphasis Design and Analysis for Serial Link(Electronic Circuits)
- A Fast-Lock DLL with Power-On Reset Circuit(Nonlinear Theory and its Applications)
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
- Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer