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Department Of Electrical Engineering Kyoto University | 論文
- Highly Reliable, Backside Emissivity Independent Cobalt Silicide Process Using a Susceptor-Based Low Pressure Rapid Thermal Processing System
- A-2-10 Improved Transient Response in non-contact Atomic Force Microscopy under Time Delayed Feedback Control(A-2. 非線形問題, 基礎・境界)
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Self-Organizing Process of Moderately Strained Zn_Cd_xSe Layer Grown on GaAs(110) by Molecular Beam Epitaxy
- Monte-Carlo Simulation of Surface Reactions in Plasma-Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films
- Responses of Embryonic Germ Cells of the Radiation-sensitive Medaka Mutant to γ-irradiation
- A Reproducible LPE Growth of High-Quality In_Ga_xP_As_y Layers on GaAs by the Control of Phosphorus Vapor on the Substrate
- Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
- Measurements of the Directions of Propagation Vector and Poynting Flux of Auroral Hiss by Means of the S-310JA-5 Rocket
- The Results of Auroral Sounding with S-310JA-4 Rocket: Electric Field, Particle and Waves
- Synthetic Observations of High-Latitude Ionosphere by S-310JA-4 Sounding Rocket
- SUBSTORMS DURING THE IMS PERIOD OBSERVED BY SOUNDING ROCKETS
- Development of the Internet-Based Total Health Care Management System Using Electronic Mail
- Wave normal direction of auroral hiss observed by the S-310JA-5 rocket
- 3-D electrostatic and electromagnetic ray tracing in the magnetosphere
- ISIS-I and ISIS-II observation of emissions triggered by doppler-shifted Norway Omega signals
- Statistical feature of non-ducted Omega signal and associated ASE observed by ISIS-I and -II satellites
- Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy GroWn ZnO Layer as a Substrate : Semiconductors
- Monolithic Integrated Device for Light Amplification : B-3: NOVEL DEVICES
- Properties of Ambient Air Aged Thin Porous Silicon