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Department Of Electrical Engineering Kyoto University:(present Address) Department Of Electrical Eng | 論文
- Sputtering Yields of Si and Ni from the Ni_Si_x System Studied by Rutherford Backscattering Spectrometry
- Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar^+ Ion Bombardment
- Low Temperature Alloyed Contact Formation in Various Metal-Semiconductor Couples : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Si(LMM) Auger Electron Emission from Si Alloys by keV Ar_+ Ion Bombardment, New Effect and Application
- X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO_2 System: Angular Variation
- A Quantitative Analysis of Electron Enegy Loss Spectra of keV Electrons from Thin-Film-Substrate System
- Electronic Energy States of HfSe_2 and NbSe_2 by Low Energy Electron Loss Spectroscopy Study
- ELS Study of Amorphous Si(Substrate)-SiO_2(Film Overlayer) System with Varying Primary Electron Energy
- Electronic Energy States of Tungsten Dichalcogenides by Low Energy Electron Loss Spectroscopy Study
- Crystal Growth of Boron Monophosphide from Cu-Fluxed Melt
- Low-Temperature Ti-Silicide Forming Reaction in Very Thin Ti-SiO_2/Si(111) Contact Systems
- Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide
- Preparation of a High Mobility Thin Film of Cd_3As_2