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Department Of Electrical And Electronics Engineering University Of Fukui | 論文
- Direct Calculation of Source Parasitic Resistance in AlGaAs/GaAs HEMTs
- Photogenerated Carriers in SrTiO_3 Probed by Mid-Infrared Absorption(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Polarized Infrared Absorption in CdI_2:CN^- Crystals
- Polarized Infrared Absorption in CdI_2 : CN^- Crystals
- Integrated Method of Determining Transmission and Distribution Loss-minimum Network Configurations
- Development of a Simple, Effective Ceramic Filter for Arsenic Removal
- Polarized Infrared Absorption of Dipole Centers in Cadmium Halide and PbI_2 Crystals (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Properties of Zn-Doped P-Type In_Ga_As on InP Substrate
- Theoretical Analysis of Breakdown Characteristics for Recessed Gate GaAs MESFETs
- Special section on fundamentals and applications of advanced semiconductor devices
- lnGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (レーザ・量子エレクトロニクス)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子デバイス)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子部品・材料)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
- Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs (レーザ・量子エレクトロニクス)