スポンサーリンク
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology | 論文
- Photoluminescence Study of CuInSe_2 Thin Films Prepared by the Selenization Technique
- Study of CuInSe_2 Formation Kinetics in the Selenization Process by Raman Spectroscopy
- Expression of Fas/Fas ligand (FasL) and its involvement in infiltrating lymphocytes in hepatocellular carcinoma (HCC)
- Upregulation of Interleukin-8/CXCL8 in Vascular Smooth Muscle Cells from Spontaneously Hypertensive Rats
- Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication
- Troglitazone Increases IL-1β Induced Cyclooxygenase-2 and Inducible Nitric Oxide Synthase Expression via Enhanced Phosphorylation of IκBα in Vascular Smooth Muscle Cells from Wistar-Kyoto Rats and Spontaneously Hypertensive Rats(Pharmacology)
- Surgical correction of spinal deformity in patients with congenital muscular dystrophy
- Pharmacokinetics of a Standard Dose of Cytarabine in a Patient with Acute Promyelocytic Leukemia Undergoing Continuous Ambulatory Peritoneal Dialysis
- Photoisomerization of Azobenzene Dendrimer Monolayer Investigated by Maxwell Displacement Current Technique : Atoms, Molecules, and Chemical Physics
- InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
- Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
- Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Preparation of GaAs and Ga_Al_xAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular-Beam Epitaxial Growthand Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
- Determination of Dielectric Relaxation Time of Langmuir-Films by a Whole-Curve Method Using the Maxwell Displacement Current