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Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology | 論文
- Determination of the Piezoelectric Coefficient of Monolayers on Water Surface by Maxwell-Displacement-Current Measurement
- Growth of Transparent Conductive Oxide ZnO Films by Atomic Layer Deposition
- Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
- In Situ Raman Spectroscopy Observation of Crystallization Process of Sol-Gel Derived Bi_La_x Ti_3O_ Films
- Characterization of Sol-gel Derived Bi_La_xTi_3O_ Films
- Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique
- Epitaxial Growth of GaSe Films by Molecular Beam Epitaxy on GaAs(111), (001) and (112) Substrates
- Photoinduced Oxidation of Epitaxial Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- Intracavity Frequency Doubling in a Femtosecond Ti:sapphire Laser Using Lithium Triborate and Beta-Barium Borate
- X-Ray Photoemission Spectroscopy of Nd_Ce_xCuO_4 and La_Sr_xCuO_4
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- Joule Loss on a Faraday Shield of JT-60 ICRF Test Antenna : Nuclear Science, Plasmas and Electric Discharges
- Reduction of Electrical Resistance of Nanometer-Thick CoSi_2 Film on CaF_2 by Pseudomorphic Growth of CaF_2 on Si(111)
- Metal (CoSi_2)/Insulator (CaF_2) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate
- Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal (CoSi_2)/Insulator (CaF_2) Heterostructures and Influence of Parasitic Circuit Elements
- Quantum Interference of Electron Wave in Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Hot Electron Transistor Structure
- Different Characteristics of Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Metal(CoSi_2)/Insulator(CaF_2) Resonant Tunneling Diode
- Control of the Arrangement of the Native Gallium Vacancies in Ga_2Se_3 on (100)GaAs by Molecular Beam Epitaxy