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Department Of Electrical And Electronic Engineering The University Of Tokushima | 論文
- Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
- Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
- Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
- Trabecular Pattern Analysis Using Fractal Dimension
- Measure Scientific Analysis of Bone Radiographs
- Al_Ga_N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition
- Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
- High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
- Spin polarization of exciton luminescence from ordered Ga0.5In0.5P
- 19aZA-8 CuCl薄膜における超高速励起子輻射緩和 : 過渡回折格子分光法による観測(超高速現象・非線形光学,領域5,光物性)
- 19aZA-9 CuCl薄膜における超高速励起子輻射緩和 : 実時間非局所理論による解析(超高速現象・非線形光学,領域5,光物性)
- 26aWH-1 CuClにおける励起子発光の電子線照射効果(26aWH 非線形光学・励起子・ポラリトン・緩和励起子・格子振動,領域5(光物性))
- The X-Ray Structure of the Supernova Remnant 3C 400.2
- Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
- Error Spectrum Shaping in 2-D State-Space Digtal Filters Using Error Diagonal Feedback
- AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers