スポンサーリンク
Department Of Electrical And Electronic Engineering The University Of Tokushima | 論文
- Trend and prospects of mobile communication systems in Japan with a medical project implemented by 3G mobile phone (MEとバイオサイバネティックス)
- Accuracy of Two-Dipole Source Localization Using a Method Combining BP Neural Network with NLS Method from 32-Channel EEGs(Human-computer Interaction)
- Accuracy of Single Dipole Source Localization by BP Neural Networks from 18-Channel EEGs (Medical Engineering)
- Measurement System of Jaw Movements by Using BP Neural Networks Method and a Nonlinear Least-Squares Method(Regular Section)
- Growth of InAsP on InP by Liquid Phase Electroepitaxy
- Functions of the D-Ribosyl Moiety and the Lower Axial Ligand of the Nucleotide Loop of Coenzyme B_ in Diol Dehydratase and Ethanolamine Ammonia-lyase Reactions
- Thickness Dependence of Carrier-Electron States in Doped Semiconductor Films
- Microscopic Structure of Dipolar Surface Plasmons in Spherical Small Particles in a Broad Size Range
- Coupling of Two-Dimensional and Surface Plasmons at Selectively-Doped Semiconductor Heterostructures
- Thickness Dependence of Electronic Structure of Small Spherical Metal Shells
- Separation of Metal from Metal-Plated Plastic by Pulsed Power
- Low Operating Voltage Bilayer Organic Light Emitting Diodes Using Electrochemically Synthesized and p-Doped Starburst-Polymer as Hole Transport Layer
- Carrier Mobilities in a Regioregular Poly(3-octylthiophene)Film at Various Oxidation Stages
- Fabrication of an Organic p-n Homojunction Diode Using Electrochemically Cation- and Photochemically Anion-Doped Polymer
- 25pPSB-43 半磁性半導体CdMnTeにおける高密度共鳴励起による磁気ポーラロンの光誘起磁化(25pPSB 領域5ポスターセッション(光誘起相転移・励起子・非線形等),領域5(光物性))
- 23pPSB-15 半磁性半導体CdMnTeにおける高密度励起効果V : 混晶によるポテンシャルゆらぎに局在した高密度磁気ポーラロンの高スピン配置(領域5ポスターセッション,領域5,光物性)
- 25pWB-11 半磁性半導体CdMnTeにおける高密度電子・正孔系のダイナミクス(25pWB 励起子・ポラリトン・高密度励起,領域5(光物性))
- Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
- Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
- Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy