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Department Of Electrical And Electronic Engineering The University Of Tokushima | 論文
- Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
- Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
- Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- Circuit Realization of a Coupled Chaotic Circuits Network and Irregular Pattern Switching Phenomenon (Special Section on Nonlinear Theory and Its Applications)
- Synchronization Phenomena in Resistively Coupled Oscillators with Different Frequencies (Special Section on Nonlinear Theory and its Applications)
- On a Ring of Oscillators Sharing Inductors
- Adaptive Simulated Annealing in CNN Template Learning
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
- X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Growth and Characterization of Carbon Nanowalls(Special Issue on Field Electron Emission from Carbon Materials)
- Seeding Diamond Nanocrystals on Si Substrates for Deposition of Diamond Films(Special Issue on Field Electron Emission from Carbon Materials)
- Growth and Characterization of Diamond Films on SiO_2/Si Substrates
- Electron Microscopic Study on the Initial Stages of (111)-Oriented Diamonds Grown on Pt Substrates