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Department Of Applied Physics Osaka City University | 論文
- Low-Temperature Formation of Epitaxial NiSi_2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
- Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
- Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy
- Growth of Silicon Nanocrystal Dots with High Number Density by Ultra-High-Vacuum Chemical Vapor Deposition
- Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials
- Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films
- Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO_2-TiO_2 Composite Films
- Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy
- Reactive Deposition Epitaxy of CoSi_2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces
- Surface and Interface Smoothing of Epitaxial CoSi_2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Population Difference and Pulse-Mode Optogalvanic Effect on Hel(2^3S-3^3P) 388.9-nm
- Author's Reply
- Erratum : Excitation Mechanism of the B^3_g-A^3Σ^+_u ir Laser Transition in N_2 Molecule
- A TE-N_2-Laser-Pumped Dye Laser of Littman Type
- New Far Infrared Laser Lines from Optically Pumped Methyl Alcohol and Their Assignments
- Excitation Process of the N_2 IR (B^3Π_g-A^3Σ^+_u) Laser Transition. II
- Excitation Process of the N_2 IR (B^3Π_g-A^3Σ^+_u) Laser Transition
- Excitation Mechanism of the B^3II_g-A^3Σ^+_u ir Laser Transition in N_2 Molecule