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Department Of Applied Physics And Chemistry University Of Electro-communications | 論文
- Effects of Aqueous Temperature on Sonolysis of Bisphenol A : Rate Constants Increasing with Temperature under Oxygen
- Fluorescence Studies on Photo-Induced Structure Changes in Purified Biphenyl Crystals
- Laser-Induced Fluorescence Spectra and Phase Transitions in Biphenyl Crystals
- Study of π^+π^- Pair Production in a Two-Photon Process at TRISTAN : VENUS Collaboration
- New Limits on Neutral Scalar Bosons
- Measurement of the Reactions e^+e^-→e^+e^- and e^+e^-→γγ at √=52 GeV
- Search for the Top Quark in e^+e^- Annihilation at √=50 GeV:The First Result from the VENUS Detector at TRISTAN
- Hierarchy of adiabatic separation of hyperradial variables in the hyperspherical treatment of many-electron atoms
- HYPERSPHERICAL ELLIPTIC COORDINATES : NEW APPROXIMATE SYMMETRY OF THREE-BODY COULOMB PROBLEM
- Quantitative analysis of nerve growth factor (NGF) in the atopic dermatitis and psoriasis horny layer and effect of treatment on NGF in atopic dermatitis
- Purification and Characterization of Vanillyl-Alcohol Oxidase from Byssochlamys fulva V107
- Isolation and Identification of an Iron-Oxidizing Bacterium Which Can Grow on Tetrathionate Medium and the Properties of a Tetrathionate-Decomposing Enzyme Isolated from the Bacterium
- Brillouin Scattering Studies on Elastic Constants and Polytypes en GaSe_S_x (0≤x≤1) Layered Crystals
- Raman Microprobe Study on Relaxation of Residual Stresses in Patterned Silicon-on-Sapphire
- Raman Scattering Characterization of Residual Stresses in Silicon-on-Sapphire
- Laser-Oscillating-Mode Dependence of Temperature Distributions in Laser Annealing of Semiconductors
- Elastic Constants of GaS and GaSe Layered Crystals Determined by Brillouin Scattering
- Brillouin Scattering in Layered Semiconductors using Microprocessor-controlled Fabry-Perot Interferometer : Physical Acoustics II
- Relief of Residual Strain in Silicon-on-Sapphire by Heat-Assisted Pulsed-Laser Annealing
- Anomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman Scattering