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Bell Laboratories Lucent Technologies | 論文
- Structural Relaxation of a La_Al_Ni_ Amorphous Alloy Measured by an Internal Friction Method
- New Icosahedral and Amorphous Phases in Mg-Al-Ag System Prepared by Liquid Quenching : Condensed Matter
- Organic Solid State Lasers
- Dayside auroral dynamics observed by the AGO network in Antarctica
- Trace Rare Gases Optical Emission Spectroscopy for Determination of Electron Temperatures and Species Concentrations in Chlorine-Containing Plasmas
- Formation of Flat Monolayer-Step-Free (110) GaAs Surfaces by Growth Interruption Annealing during Cleaved-Edge Epitaxial Overgrowth : Semiconductors
- Modeling and Simulation of Tunneling Current in MOS Devices Including Quantum Mechanical Effects (Special lssue on SISPAD'99)
- Significance of the high-latitude geomagnetic index AES-80 : comparison with the PC index
- The Vertical Replacement-Gate (VRG) MOSFET : A High-Performance Vertical MOSFET with Lithography-Independent Critical Dimensions
- Effects of Degree of Dissociation on Aluminum Etching in High-Density Cl_2 Plasmas
- Ultra-High Capacity 40-Gb/s WDM Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Air Entrapment from a Highly Distorted Free Surface
- Implantation and Annealing Strategies for Ultra-Shallow Junction Formation
- High Speed InP-Based ICs for a Fiber-to-Microwave Link
- Multiplicity of the Metal-Insulator Transition in Uncompensated, Randomly Doped Semiconductors
- Ultra-High Capacity 40-Gb/s WDM Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- A Fictive Stress Model Calculation of Creep Deformation of Zr-based Bulk Metallic Glass in the Glass Transition Region under a Constant Load
- Patterning GaN Microstructures by Polarity-Selective Chemical Etching
- Optical Detection of Electron-Depletion Region Surrounding Metal Electrode on a Dilute Two-Dimensional Electron Gas
- Single-Crystal Field-Effect Transistors Based on Organic Selenium-Containing Semiconductor