Single-Crystal Field-Effect Transistors Based on Organic Selenium-Containing Semiconductor
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概要
- 論文の詳細を見る
We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b$'$]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than $-7$ V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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OTSUBO Tetsuo
Graduate School of Engineering, Hiroshima University
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Konda Yasushi
Graduate School Of Engineering Hiroshima University
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Niihara Naoto
Graduate School Of Engineering Hiroshima University
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Zeis Roswitha
Bell Laboratories Lucent Technologies
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Kloc Christian
Bell Laboratories Lucent Technologies
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Kunugi Yoshihito
Faculty Of Integrated Arts And Sciences Hiroshima University
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Takimiya Kazuo
Graduate School Of Engineering Hiroshima University
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Otsubo Tetsuo
Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Kunugi Yoshihito
Faculty of Integrated Arts and Sciences, Hiroshima University, 1-7-1 Kagamiyama, Higashi-Hiroshima, Horoshima 739-8521, Japan
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Kloc Christian
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974, U.S.A.
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Niihara Naoto
Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
関連論文
- Development of New Semiconducting Materials for Durable High-performance Air-stable Organic Field-effect Transistors
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- Thin Film Characteristics and FET Performances of β-Octyl-substituted Long Oligothiophenes
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