Multiplicity of the Metal-Insulator Transition in Uncompensated, Randomly Doped Semiconductors

概要

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The filataaentary ua'rodel of' tlais tratusition has pn'eviotrsly explained tlue existence of separatecontintrotrs charge transport and first-order thertnal phase transitions, and given exact valuesfor the coua?position exponents associated xvith the charge transport tratnsitiora in the retmarkatblybroad critical regior? 10 '< ?n/n. - 11< l. Here the raaodel is extended to the strpercriticalregion 10 '< ?n/n. - 11< 10 ', where a new teunperattrre exponent, T', with q : 1/3 hasbeen obserx'ed by NVtrtanabe, Oottrk?t, Itoh and Halter, rejolatcing the valtte q 10 1 /2 fottnd f'or tirecritical r'egion. Tl?e tnetallic cotmposition exponent v : 172 is trnchanged, 21S is tlae conapositionexpor?ent a : 1 of tlte instrlating psetrdogap Tc), srnd both contrast strongly with the larger valttesof' v and (l fottnd in non-fi1?ruaaentarry raaodels.
社団法人日本物理学会の論文
1998-10-15