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Advanced Technology Research Laboratories, Sharp Corporation | 論文
- Novel Ultra Thin Heavily Nitrided Gate Dielectrics Technology Adding Fluorine for Highly Reliable MOSFETs
- Novel Impurity Activation Technology Using Gate Poly-Si Oxidation
- Study of an Elevated Drain Fabrication Method for Ultra Shallow Junction
- Novel Ultra Clean Salicide Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1μm Gate Electrode
- Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
- Novel Nitrogen Profile Control Technology in Ultra Thin Gate Oxide for Deep Submicron CMOS
- Heat and Fluid Flow in Solvothermal Autoclave for Single-Crystal Growth Process
- Amorphous Magnetic Film Patterned Media with Columnar Structure
- Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme
- Numerical Simulation of Heat and Fluid Flow in Ammonothermal GaN Bulk Crystal Growth Process
- Blue Laser Diodes Fabricated on m-Plane GaN Substrates
- Bidirectional migration of Au colloids and silicon microrods in liquid using asymmetrical alternating current electric field with insulated electrodes