Numerical Simulation of Heat and Fluid Flow in Ammonothermal GaN Bulk Crystal Growth Process
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概要
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A numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed. The autoclave and growing crystal are assumed to be axisymmetric and the raw material is assumed to be a porous medium. Heat transfer by natural convection is discussed in terms of the open-space ratio of the baffle and the height of the crystals. Simulation results show that a larger open-space ratio, at least 30%, is better for the crystal growth from the viewpoints of average surface temperature and flow direction.
- 2013-08-25
著者
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SUZUKI Akira
Advanced Technology Research Laboratories, Sharp Corporation
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Masuda Yoshio
Advanced Industrial Science and Technology (AIST), Sendai 983-8551, Japan
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Yokoyama Chiaki
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
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YOKOYAMA Chiaki
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University
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Ishiguro Tohru
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
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ISHIGURO Tohru
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University
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