Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
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KAKIMOTO S.
Advanced Technology Research Laboratories, Sharp Corporation
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Kakimoto S.
Advanced Technology Research Laboratories Sharp Corporation
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Kotaki H.
Advanced Technology Research Laboratories Sharp Corporation
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NAKANO M.
Central Research Laboratories, Sharp Corporation
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KOTAKI H.
Central Research Laboratories, Sharp Corporation
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KAKIMOTO S.
Central Research Laboratories, Sharp Corporation
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HAYASHIDA S.
Central Research Laboratories, Sharp Corporation
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MATSUOKA T.
Central Research Laboratories, Sharp Corporation
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NAKANO A.
Analysis Center, (IC) Group, Sharp Corporation
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UDA K.
Central Research Laboratories, Sharp Corporation
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SATO Y.
Central Research Laboratories, Sharp Corporation
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Uda K.
Central Research Laboratories Sharp Corporation
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- Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
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