KAKIMOTO S. | Advanced Technology Research Laboratories, Sharp Corporation

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概要

• KAKIMOTO S.の詳細を見る
• 同名の論文著者
• Advanced Technology Research Laboratories, Sharp Corporationの論文著者

関連著者

• KAKIMOTO S.

  Advanced Technology Research Laboratories, Sharp Corporation

• Kakimoto S.

  Advanced Technology Research Laboratories Sharp Corporation

• Kotaki H.

  Advanced Technology Research Laboratories Sharp Corporation

• OHTA K.

  Advanced Technology Research Laboratories, Sharp Corporation

• HASHIZUME N.

  Advanced Technology Research Laboratories, Sharp Corporation

• Hashizume N.

  Advanced Technology Research Laboratories Sharp Corporation

• Morosawa N.

  Advanced Technology Research Laboratories Sharp Corporation

• KOTAKI H.

  Advanced Technology Research Laboratories, Sharp Corporation

• NAKANO M.

  Central Research Laboratories, Sharp Corporation

• KOTAKI H.

  Central Research Laboratories, Sharp Corporation

• KAKIMOTO S.

  Central Research Laboratories, Sharp Corporation

• YAMANAKA M.

  Advanced Technology Research Laboratories, Sharp Corporation

• NAKANO M.

  Advanced Technology Research Laboratories, Sharp Corporation

• SUGIMOTO K.

  Advanced Technology Research Laboratories, Sharp Corporation

• OKUMINE T.

  Advanced Technology Research Laboratories, Sharp Corporation

• YOSHIOKA F.

  Advanced Technology Research Laboratories, Sharp Corporation

• KATAOKA K.

  Central Research Laboratories, Sharp Corporation

• HAYASHIDA S.

  Central Research Laboratories, Sharp Corporation

• MATSUOKA T.

  Central Research Laboratories, Sharp Corporation

• NAKANO A.

  Analysis Center, (IC) Group, Sharp Corporation

• UDA K.

  Central Research Laboratories, Sharp Corporation

• SATO Y.

  Central Research Laboratories, Sharp Corporation

• Okumine T.

  Advanced Technology Research Laboratories Sharp Corporation

• Uda K.

  Central Research Laboratories Sharp Corporation

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著作論文

• Novel Ultra Thin Heavily Nitrided Gate Dielectrics Technology Adding Fluorine for Highly Reliable MOSFETs
• Novel Impurity Activation Technology Using Gate Poly-Si Oxidation
• Study of an Elevated Drain Fabrication Method for Ultra Shallow Junction
• Novel Ultra Clean Salicide Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1μm Gate Electrode
• Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)

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