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Advanced Technology Research Laboratories, Nippon Steel Corporation | 論文
- Mesoscopic Phenomena in Microstructures of IV-VI Epilayers
- Direct Observation of Exciton Magnetic Polaron in CdMnTe from Polarized Magneto-Photoluminescence
- Heteroepitaxial Growth of InAs on Misoriented GaAs(111)B Substrates by Molecular Beam Epitaxy
- Initial Growth Mechanism of Si on GaAs Studied by Reflection High-Energy Electron Diffraction Oscillations
- Magic-angle-spinning NMR at 30T with a Hybrid Magnet
- ^P{^Al} MQMAS/HETCOR NMR Study on Structure of Amorphous AlPO_4
- Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals
- Realization of Two-Dimensional Growth and Suppression of Threading Dislocation Generation in (InP)_1(GaAs)_n Quaternary Strained Short-Period Superlattices Grown on GaAs
- Reduction Mechanism of Threading Dislocation Density in GaAs Epilayer Grown on Si Substrate by High-Temperature Annealing
- X-ray Photoelectron Spectroscopy Study in Bi_2Sr_2Ca_Nd_xCu_2O_
- Electron Spin Resonance Studies on Spots with Brown Rims on a Vitreous Silica Surface formed by a Silicon Melt
- Physical characteristics of a Horizontally Injected Gas Jet and Turbulent Flow in Metallurgical Vessels
- Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose Separation by Implanted Oxygen (SIMOX) Substrates Fabricated by Internal Thermal Oxidation (ITOX) Process
- Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose SIMOX Structures
- Evaluation of Fixed Charge and Interface Trap Densities in SIMOX Wafers and Their Effects on Device Characteristics
- Current-Path Observation in Low-Dose SIMOX (Separation by Implanted Oxygen) Buried-SiO_2 Layer
- Accuracy of Total Reflection X-Ray Fluorescence Spectrometry near the Detection Limit
- A Standard Sample Preparation Method for the Determination of Metal Impurities on a Silicon Wafer by Total Reflection X-Ray Fluorescence Spectrometry
- Generalized Grazing Incidence-Angle X-Ray Diffraction Studies on InAs Quantum Dots on Si(100) Substrates
- Quantitative Evaluation of the Quantum Efficiency of a Superconducting Tunnel Junction with the Multiple Scattering Process Model of Primary Photoelectrons