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Advanced Technology Development Team | 論文
- Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
- Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET
- RC-FinFET (Recessed Channel FinFET) Cell Transistor Technology for Future Generation DRAMs
- Optimization of Layout and Doping Profile Design for BT(Body Tied)-FinFET DRAM
- Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Oxide for Deep-Submicron CMOS Technologies
- Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Oxide for Deep-Submicron CMOS Technologies
- A Novel Multifin Dynamic Random Access Memory Periphery Transistor Technology Using a Spacer Patterning through Gate Polycrystalline Silicon Technique
- Nano Bowls of Carbon by Oxidative Chopping of Carbon Nano Sphere
- Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect Transistor
- Recessed Channel Fin Field-Effect Transistor Cell Technology for Future-Generation Dynamic Random Access Memories
- Three Series-Connected Transistor Model for a Recess-Channel-Array Transistor and Improvement of Electrical Characteristics by a Bottom Fin Structure