MOTOYOSHI Mizuki | Graduate School of Advanced Sciences of Matter, Hiroshima University

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概要

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著作論文

Device Modeling Techniques for High-Frequency Circuits Design Using Bond-Based Design at over 100GHz
140GHz CMOS amplifier with group delay variation of 10.2ps and 0.1dB bandwidth of 12GHz
Analysis of De-Embedding Error Cancellation in Cascade Circuit Design
Bias-Voltage-Dependent Subcircuit Model for Millimeter-Wave CMOS Circuit
A 120-GHz Transmitter and Receiver Chipset with 9-Gbps Data Rate Using 65-nm CMOS Technology
135GHz 98mW 10Gbps CMOS Amplitude Shift Keying Transmitter and Receiver Chipset
A 120GHz/140GHz Dual-Channel OOK Receiver Using 65nm CMOS Technology
C-2-37 Design for Maximum FOM of 79GHz Power Amplifier with Temperature Compensation

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