140GHz CMOS amplifier with group delay variation of 10.2ps and 0.1dB bandwidth of 12GHz
スポンサーリンク
概要
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A 140GHz CMOS wideband amplifier is proposed with the low group delay variation required to achieve a high-speed D-band wireless receiver. The amplifier is fabricated by the standard 1P12M 65nm CMOS process. From measurement, the gain is 10dB with a group delay variation of 10.2ps. The 0.1dB bandwidth, used as the figure of merit of the gain flatness, is 12GHz, whereas the generally used 3dB bandwidth is 27.6GHz. The power consumption is 57.1mW with a supply voltage of 1.2V.
著者
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Fujimoto Ryuichi
Elp R&d Dept. Semiconductor Technol. Academic Res. Center (starc)
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Fujimoto Ryuichi
Elp R&d Dept. Semiconductor Technology Academic Research Center (starc)
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Fujishima Minoru
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MOTOYOSHI Mizuki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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FUJISHIMA Minoru
Graduate School of Advanced Sciences of Matter, Hiroshima University
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TAKANO Kyoya
Graduate School of Advanced Sciences of Matter, Hiroshima University
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