Izunome K | Toshiba Ceramics Co. Ltd. Tokyo Jpn
スポンサーリンク
概要
関連著者
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Izunome K
Toshiba Ceramics Co. Ltd. Tokyo Jpn
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Huang X
Nanjing Univ. Nanjing Chn
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HUANG Xinming
Faculty of Education, Shinshu University
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TERASHIMA Kazutaka
湘南工科大学工学部材料工学科
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KIMURA Shigeyuki
木村融液動態プロジェクト
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TERASHIMA Kazutaka
Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium
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KIMURA Shigeyuki
Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium
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HUANG Xinming
Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium
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Saito Yoshihiko
Toshiba Corp. Semiconductor Materials Engineering Dept.
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IZUNOME Koji
Kimura METAMELT Project, ERATO, JRDC
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Izunome Koji
Toshiba Ceramics Co. R&d Center
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Izunome Koji
Kimura Metamelt Project Erato Jrdc Tsukuba Research Consortium
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Kimura Shigeyuki
Kimura Metamelt Project
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KUBOTA Hiroyasu
Toshiba Corp., Semiconductor Materials Engineering Dept.
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Terashima Kazutaka
Kimura Metamelt Project Erato Jrdc Tsukuba Research Consortium
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HUANG Xinming
Kimura METAMELT Project, ERATO, JRDC
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Tsuchiya Norihiko
Toshiba Corp. Semiconductor Materials Engineering Dept.
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HUANG Xinming
木村融液動態プロジェクト
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IZUNOME Koji
木村融液動態プロジェクト
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HUANG Xinming
Tsukuba Research Consortium
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TERASHIMA Kazutaka
Tsukuba Research Consortium
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IZUNOME Koji
Tsukuba Research Consortium
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KIMURA Shigeyuki
Tsukuba Research Consortium
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TAKEDA Ryuji
Toshiba Ceramics Co., Ltd., Research and Development Center
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HAYASHI Kenro
Toshiba Ceramics, R & D Center
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FUKUI Hiroyuki
Toshiba Corp., Semiconductor Materials Engineering Dept.
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Fukui Hiroyuki
Toshiba Corp. Semiconductor Materials Engineering Dept.
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Takeda Ryuji
Toshiba Ceramics Co. Ltd. Research And Development Center
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Hayashi Kenro
Toshiba Ceramics R & D Center
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Takeda R
Toshiba Ceramics Co. Ltd. Kanagawa Jpn
著作論文
- Chemical Reaction of Sb Atoms in Si Melt
- Chermieal Reaction of Sb Atoms in Si Melt
- Effect of Background Gas Pressure on Evaporation of Oxides from Sb-Doped Si Melt
- Relationship between Different Interfacial Phases and Oxygen Solubility in Silicon Melt
- Dependence of Time Dependent Dielectric Breakdown Characteristics on Mechanism for Silicon Epitaxial Growth on Misoriented Czochralski Silicon Crystal
- Periodic Step and Terrace Formation on Si(100) Surface during Si Epitaxial Growth by Atmospheric Chemical Vapor Deposition