KUBOTA Hiroyasu | Toshiba Corp., Semiconductor Materials Engineering Dept.

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概要

• 同名の論文著者
• Toshiba Corp., Semiconductor Materials Engineering Dept.の論文著者

関連著者

• Saito Yoshihiko

  Toshiba Corp. Semiconductor Materials Engineering Dept.

• Izunome K

  Toshiba Ceramics Co. Ltd. Tokyo Jpn

• Izunome Koji

  Toshiba Ceramics Co. R&d Center

• KUBOTA Hiroyasu

  Toshiba Corp., Semiconductor Materials Engineering Dept.

• Tsuchiya Norihiko

  Toshiba Corp. Semiconductor Materials Engineering Dept.

• TAKEDA Ryuji

  Toshiba Ceramics Co., Ltd., Research and Development Center

• HAYASHI Kenro

  Toshiba Ceramics, R & D Center

• FUKUI Hiroyuki

  Toshiba Corp., Semiconductor Materials Engineering Dept.

• Fukui Hiroyuki

  Toshiba Corp. Semiconductor Materials Engineering Dept.

• Takeda Ryuji

  Toshiba Ceramics Co. Ltd. Research And Development Center

• Hayashi Kenro

  Toshiba Ceramics R & D Center

• Takeda R

  Toshiba Ceramics Co. Ltd. Kanagawa Jpn

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著作論文

• Dependence of Time Dependent Dielectric Breakdown Characteristics on Mechanism for Silicon Epitaxial Growth on Misoriented Czochralski Silicon Crystal
• Periodic Step and Terrace Formation on Si(100) Surface during Si Epitaxial Growth by Atmospheric Chemical Vapor Deposition

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