Kofuji Naoyuki | Central Research Laboratory Hitachi Ltd.
スポンサーリンク
概要
関連著者
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Kofuji Naoyuki
Central Research Laboratory Hitachi Ltd.
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KOFUJI Naoyuki
Central Research Laboratory, Hitachi, Ltd.
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Negishi Nobuyuki
Central Research Laboratory, Hitachi Ltd., 1-280 Higashikoigakubo, Kokubunji, Tokyo 185-8601, Japan
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Kamibayashi Masami
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Mori Masahito
Semiconductor Manufacturing Equipment Division, Hitachi High-Technologies Corporation, Minato, Tokyo 105-8717, Japan
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伊澤 勝
日立中研
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ITABASHI Naoshi
Central Research Laboratory, Hitachi, Ltd.
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TSUTSUMI Takashi
Kasado Semiconductor Equipment Product Division, Hitachi, Ltd.
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MATSUMOTO Eiji
Kasado Semiconductor Equipment Product Division, Hitachi, Ltd.
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FUJIMOTO Kotaro
Hitachi Techno Eng. Co., Ltd.
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IZAWA Masaru
Central Research Laboratory, Hitachi, Ltd.
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FUJII Takashi
Kasado Semiconductor Equipment Product Division, Hitachi, Ltd.
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Miura Hideo
Fracture And Reliability Research Institute Graduate School Of Engineering Tohoku University
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TSUJIMOTO Kazunori
Central Research Laboratory, Hitachi, Ltd.
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Itabashi Naoshi
Central Research Laboratory Hitachi Ltd.
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Kumihashi Takao
Central Research Laboratory, Hitachi, Ltd.
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Kumihashi T
Hitachi Ltd. Tokyo Jpn
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Tsujimoto Kazunori
Central Research Laboratory Hitachi Ltd
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Fujimoto Kotaro
Hitachi Techno Eng. Co. Ltd.
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Matsumoto Eiji
Kasado Semiconductor Equipment Product Division Hitachi Ltd.
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Tsutsumi Takashi
Kasado Semiconductor Equipment Product Division Hitachi Ltd.
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Fujii Takashi
Kasado Semiconductor Equipment Product Division Hitachi Ltd.
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TACHI Shin'ichi
Central Research Laboratory, Hitachi, Ltd.
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Kofuji Naoyuki
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Izawa Masaru
Central Research Laboratory, Hitachi Ltd., 1-280 Higashikoigakubo, Kokubunji, Tokyo 185-8601, Japan
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MIURA Hideo
Fracture and Reliability Research Institute (FRRI), Graduate School of Engineering, Tohoku University
著作論文
- 240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry
- Reduction in Microloading by High-Gas-Flow-Rate Electron Cyclotron Resonance Plasma Etching
- Negative Impact of Etched Si Area on Selectivity and Positive Impact of Photoelectric Current on Etched Profile in Gate Etching with Different Wafer Bias Frequencies
- Investigation of Mask Inclination Due to Oxygen-Radical Irradiation during Resist Trimming
- Negative Impact of Etched Si Area on Selectivity and Positive Impact of Photoelectric Current on Etched Profile in Gate Etching with Different Wafer Bias Frequencies