Santillan Julius | Semiconductor Leading Edge Technologies Inc.
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概要
関連著者
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Santillan Julius
Semiconductor Leading Edge Technologies Inc.
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Itani Toshiro
Semiconductor Leading Edge Technol. Ibaraki Jpn
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Tagawa Seiichi
The Institute Of Scientific And Industrial Research
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KOZAWA Takahiro
The Institute of Scientific and Industrial Research (ISIR), Osaka University
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Toriumi Minoru
Semiconductor Leading Edge Technologies Inc.(selete)
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Itani Toshiro
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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ITANI Toshiro
Semiconductor Leading Edge Technolgies, Inc.
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Kozawa Takahiro
The Institute Of Scientific And Industrial Research Osaka University
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Morita Masamichi
Daikin Industries Ltd
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Toshiro Itani
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Toshiro Itani
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Julius Joseph
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Masamichi Morita
Daikin Industries, Ltd., 1-1 Nishi Hitotsuya, Settsu, Osaka 566-8585, Japan
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Yamashita Tsuneo
Daikin Industries, Ltd., 1-1 Nishi Hitotsuya, Settsu, Osaka 566-8585, Japan
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Yoshito Tanaka
Daikin Industries, Ltd., 1-1 Nishi Hitotsuya, Settsu, Osaka 566-8585, Japan
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Tsuneo Yamashita
Daikin Industries, Ltd., 1-1 Nishi Hitotsuya, Settsu, Osaka 566-8585, Japan
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Toriumi Minoru
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- The Emergence of Alternative Developers for Extreme Ultraviolet Lithography
- Outgassing quantification analysis of extreme ultraviolet resists (Special issue: Microprocesses and nanotechnology)
- EUV resist outgassing: quantification and release mechanisms
- Fluorinated-Polymer Based High Sensitivity Extreme Ultraviolet Resists
- In situ Characterization of Photoresist Dissolution
- Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
- Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication