DELEONIBUS S. | CEA/DRT-LETI
スポンサーリンク
概要
関連著者
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DELEONIBUS S.
CEA-LETI
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DELEONIBUS S.
CEA/DRT-LETI
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MARTIN F.
CEA/DRT-LETI
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DELEONIBUS S.
LETI(CEA) Dept de Microelectronique
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MARTIN F.
LETI(CEA) Dept de Microelectronique
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Heitzmann M.
Leti(cea)
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Hartmann J.
Cea-leti
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Delaye V.
Cea-leti
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Guillaumot B.
Stmicroelectronics
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VIZIOZ C.
CEA-LETI
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ANDRIEU F.
CEA-LETI
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POIROUX T.
CEA-LETI
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FAYNOT O.
CEA-LETI
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Casse M.
Cea-leti Minatec
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Allain F.
Cea-leti Minatec
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GOBIL Y.
LETI(CEA)
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DEMOLLIENS O.
LETI(CEA)
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GUIBERT J.
LETI(CEA)
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BARNOLA S.
CEA-LETI
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Toffoli A.
Cea/drt-leti
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Ghibaudo G.
Imep Inpg-minatec
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ERNST T.
CEA-LETI
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DUPRE C.
CEA-LETI
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DORNEL E.
CEA-LETI
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BARBE J.
CEA-LETI
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BECU S.
CEA-LETI
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HARTMANN J-M.
CEA-LETI
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GHIBAUDO G.
IMEP, INPG-MINATEC
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VINET M.
CEA/DRT-LETI
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POIROUX T.
CEA/DRT-LETI
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WIDIEZ J.
STMicroelectronics
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LOLIVIER J.
CEA/DRT-LETI
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PREVITALI B.
CEA/DRT-LETI
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VIZIOZ C.
CEA/DRT-LETI
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BESSON P.
STMicroelectronics
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SIMON J.
CEA/DRT-LETI
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MAITREJEAN S.
CEA/DRT-LETI
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HOLLIGER P.
CEA/DRT-LETI
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BIASSE B.
CEA/DRT-LETI
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CASSE M.
CEA/DRT-LETI
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ALLAIN F.
CEA/DRT-LETI
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LAFOND D.
CEA/DRT-LETI
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HARTMANN J.
CEA/DRT-LETI
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TRUCHE R.
CEA/DRT-LETI
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CARRON V.
CEA/DRT-LETI
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LAUGIER F.
CEA/DRT-LETI
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ROMAN A.
STMicroelectronics
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MORAND Y.
STMicroelectronics
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RENAUD D.
CEA/DRT-LETI
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MOUIS M.
IMEP (UMR CNRS/INPG/UJF)
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Maury P.
Cea-leti Minatec
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Kim S.
Gasonics International
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Leroux C.
Leti(cea) Dept De Microelectronique
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BUJ-DUFOURNET C.
CEA-LETI MINATEC
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ROCHETTE F.
CEA-LETI MINATEC
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AUSSENAC F.
CEA-LETI MINATEC
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TOSTI L.
CEA-LETI MINATEC
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VANDROUX L.
CEA-LETI MINATEC
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DAVAL N.
SOITEC, Parc technologique des Fontaines
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CAYREFOURCQ I.
SOITEC, Parc technologique des Fontaines
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Emami A.
Gasonics International
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Daval N.
Soitec Parc Technologique Des Fontaines
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Cayrefourcq I.
Soitec Parc Technologique Des Fontaines
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FLORIN B.
LETI(CEA) Dept de Microelectronique
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HEITZMANN M.
LETI(CEA) Dept de Microelectronique
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GUILLAUMOT B.
SGS-THOMSON Department de Microelectronique
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CANDELIER P.
LETI(CEA)
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GUIBERT J.-C.
LETI(CEA) Dept de Microelectronique
著作論文
- 3D Stacked Nanowires CMOS Integration with a Damascene Finfet Process
- Planar Double Gate CMOS transistors with 40nm metal gate for multipurpose applications
- Additivity between sSOI- and CESL-induced nMOSFETs Performance Boosts
- A High Pressure High Temperature Poly Buffer LOCOS (HP-HTPBL) Isolation Process for 1Gbit Density Non Volatile Memories
- High Performance Shallow Trench Isolation for High Density Flash Memory Cells
- A Post Gigabit Generation Flash Memory Shallow Trench Isolation Scheme. The LATI-STI Process (LArge Tilt Implanted Sloped Trench Isolation) Using 100% CMP Planarization