Growth of Horizontally-Aligned Single-Walled Carbon Nanotubes on Sapphire Surface by Needle-Scratching Method (Special Issue : Solid State Devices and Materials (2))
スポンサーリンク
概要
著者
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Tsuji Masaharu
Institute For Materials Chemistry And Engineering Kyushu University
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Ago Hiroki
Institute For Materials Chemistry And Engineering Kyushu University
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Kayo Yasumichi
Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan
関連論文
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- Emission Spectum of NeAr_2^+ Cluster Ion Produced in the Flowing Afterglow
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- Mass-Spectrometric Study on Ion-Molecule Reactions of CF^+_3 with Propyne, Allene, and 1-Butyne at Near-Thermal Energies
- Chemical Ionization Mass Spectra of Benzene and Toluene at Low CH_4 Pressures
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- A Chemical Dry Etching of Si and SiO_2 Substrates by F atoms in a Discharge Flow
- Decomposition of NO by Microwave Discharge of NO/He or NO/Ar Mixtures
- Decomposition of N_2O by Microwave Discharge of N_O2/He or N_2O/Ar Mixtures : Atoms, Molecules, and Chemical Physics
- Decomposition of CO_2 into CO and O in a Microwave-Excited Discharge Flow of CO_2/He or CO_2/Ar Mixtures
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- Efficient Conversion of NO_2 into N_2 and O_2 in N_2 or into N_2O_5 in Air by 172-nm Xe_2 Excimer Lamp at Atmospheric Pressure
- Effects of Bubbling N_2 or O_2 Gas in Syntheses of Gold Nanocrystals Using a Polyol Method
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- SiO_2 Film Growth from ArF Laser Photolysis of Si_2H_6 and N_2O in a Perpendicular Irradiation Configuration
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- Growth of Horizontally-Aligned Single-Walled Carbon Nanotubes on Sapphire Surface by Needle-Scratching Method (Special Issue : Solid State Devices and Materials (2))
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