An Inverter-Based Wideband Low-Noise Amplifier in 40nm Complementary Metal Oxide Semiconductor (Special Issue : Solid State Devices and Materials (2))
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
関連論文
- A Universal Equivalent Circuit Model for Ceramic Capacitors
- Layout-Aware Compact Model of MOSFET Characteristics Variations Induced by STI Stress
- C-12-43 CMOS Power Amplifier in 65nm Technology
- C-12-37 CMOS Inverter-based Wideband LNA in 65nm Technology
- An Evaluation Method of the Number of Monte Carlo STA Trials for Statistical Path Delay Analysis
- Analytical Estimation of Path-Delay Variation for Multi-Threshold CMOS Circuits
- 2-Port Modeling Technique for Surface-Mount Passive Components Using Partial Inductance Concept
- One-Shot Voltage-Measurement Circuit Utilizing Process Variation
- Application of Correlation-Based Regression Analysis for Improvement of Power Distribution Network
- C-12-23 A Study of Inverter-based RF CMOS Low Noise Amplifier Scalability in CMOS Process
- C-2-82 Broadside 3-dB Tandem Coupler Using WLP Technology for 60 GHz Applications
- An Inverter-Based Wideband Low-Noise Amplifier in 40nm Complementary Metal Oxide Semiconductor (Special Issue : Solid State Devices and Materials (2))