Schottky-barrier-induced AC surface photovoltages in Au-precipitated n-type Si(001) surfaces

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Shimizu Hirofumi

  College of Engineering, Nihon University, 1 Aza-Nakagawara, Tokusada, Tamura-machi, Koriyama, Fukushima 963-8642, Japan

• Sanada Yuji

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

関連論文

• Characteristics of Sol–Gel-Derived and Crystallized HfO2 Thin Films Dependent on Sol Solution
• Schottky-barrier-induced AC surface photovoltages in Au-precipitated n-type Si(001) surfaces
• Characterization of Sol–Gel Derived and Crystallized ZrO2 Thin Films
• Temperature-Programmed Desorption Analyses of Sol–Gel Deposited and Crystallized HfO2 Films
• Erratum: ``Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces''
• Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air
• Material Microcharacterization of Sol–Gel Derived HfO2 Thin Films on Silicon Wafers
• Direct Observation of Au Nanoclusters at Au/Si Interface and Enhanced SiO

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