Material Microcharacterization of Sol–Gel Derived HfO2 Thin Films on Silicon Wafers
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概要
- 論文の詳細を見る
Upon sintering a sol–gel derived HfO2 film at 700°C, on the basis of high-resolution transmission electron microscope measurement combined with electron beam nanodiffraction, the HfO2 film was found to be crystallized in a monoclinic fcc (face centered cubic) structure. The measured interplanar spacing of the crystalline HfO2 on the (111) plane was determined to be 0.314 nm, which was close to the spacing of Si (111) planes, implying the possibility of the epitaxial growth of HfO2 films on Si (111).
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-10-15
著者
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Kawai Naoyuki
Lsi Manufacturing Technology Unit Renesas Technology Corp.
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Nishide Toshikazu
College Of Engineering Nihon University
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Asayama Kyoichiro
LSI Manufacturing Technology Unit, Renesas Technology Corp., 5-20-1 Josuihon-cho, Kodaira-shi, Tokyo 187-8588, Japan
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Shimizu Hirofumi
College of Engineering, Nihon University, 1 Aza-Nakagawara, Tokusada, Tamura-machi, Koriyama, Fukushima 963-8642, Japan
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Nishide Toshikazu
College of Engineering, Nihon University, 1 Aza-Nakagawara, Tokusada, Tamura-machi, Koriyama, Fukushima 963-8642, Japan
関連論文
- Characteristics of Sol–Gel-Derived and Crystallized HfO2 Thin Films Dependent on Sol Solution
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- Characterization of Sol–Gel Derived and Crystallized ZrO2 Thin Films
- Temperature-Programmed Desorption Analyses of Sol–Gel Deposited and Crystallized HfO2 Films
- Erratum: ``Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces''
- Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air
- Material Microcharacterization of Sol–Gel Derived HfO2 Thin Films on Silicon Wafers
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