Direct Observation of Au Nanoclusters at Au/Si Interface and Enhanced SiO
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概要
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The behavior of Au nanoclusters at a Au/n-Si interface was investigated. In particular, SiO<inf>2</inf>growth in thermally oxidized Au-precipitated n-type Si(001) surfaces was enhanced by the catalytic action of Au. When the Au-precipitated Si wafer was exposed to air for 30 d at room temperature (RT), a SiO<inf>2</inf>film layer grew over Au nanoclusters on the Si surface. This is possibly because Si atoms may diffuse in an as-deposited Au layer and are oxidized in air at RT. In the case of oxidation at higher temperatures (850 °C for 30 min), Au nanoclusters were found to exist at the Au/n-Si interface. Moreover, the origin of protuberances observed by atomic force microscopy was found to be a bulge in the SiO<inf>2</inf>film formed over the Au nanocluster, proving that the growth of the SiO<inf>2</inf>film layer was enhanced by the catalytic action of Au.
- 2013-04-25
著者
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Shimizu Hirofumi
College of Engineering, Nihon University, 1 Aza-Nakagawara, Tokusada, Tamura-machi, Koriyama, Fukushima 963-8642, Japan
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Kumamoto Akihito
Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Imamura Senji
College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan
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- Erratum: ``Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces''
- Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air
- Material Microcharacterization of Sol–Gel Derived HfO2 Thin Films on Silicon Wafers
- Direct Observation of Au Nanoclusters at Au/Si Interface and Enhanced SiO