Shimizu Hirofumi | College of Engineering, Nihon University, 1 Aza-Nakagawara, Tokusada, Tamura-machi, Koriyama, Fukushima 963-8642, Japan

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概要

• Shimizu Hirofumiの詳細を見る
• 同名の論文著者
• College of Engineering, Nihon University, 1 Aza-Nakagawara, Tokusada, Tamura-machi, Koriyama, Fukushima 963-8642, Japanの論文著者

関連著者

• Shimizu Hirofumi

  College of Engineering, Nihon University, 1 Aza-Nakagawara, Tokusada, Tamura-machi, Koriyama, Fukushima 963-8642, Japan

• Nishide Toshikazu

  College Of Engineering Nihon University

• Ikeda Masanori

  College Of Engineering Nihon University

• Sanada Yuji

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

• Konagai Satoshi

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

• Kawai Naoyuki

  Lsi Manufacturing Technology Unit Renesas Technology Corp.

• Asayama Kyoichiro

  LSI Manufacturing Technology Unit, Renesas Technology Corp., 5-20-1 Josuihon-cho, Kodaira-shi, Tokyo 187-8588, Japan

• Sato Taku

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

• Takahashi Tomoko

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

• Nishide Toshikazu

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

• Nishide Toshikazu

  College of Engineering, Nihon University, 1 Aza-Nakagawara, Tokusada, Tamura-machi, Koriyama, Fukushima 963-8642, Japan

• Shimizu Hirofumi

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

• Kumamoto Akihito

  Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Nemoto Daiki

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

• Imamura Senji

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

• Ikeda Masanori

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

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著作論文

• Characteristics of Sol–Gel-Derived and Crystallized HfO2 Thin Films Dependent on Sol Solution
• Schottky-barrier-induced AC surface photovoltages in Au-precipitated n-type Si(001) surfaces
• Characterization of Sol–Gel Derived and Crystallized ZrO2 Thin Films
• Temperature-Programmed Desorption Analyses of Sol–Gel Deposited and Crystallized HfO2 Films
• Erratum: ``Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces''
• Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air
• Material Microcharacterization of Sol–Gel Derived HfO2 Thin Films on Silicon Wafers
• Direct Observation of Au Nanoclusters at Au/Si Interface and Enhanced SiO

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