Characterization of Sol–Gel Derived and Crystallized ZrO2 Thin Films

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概要

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• Sol–gel-derived zirconium dioxide (ZrO2) films on silicon (Si) substrates fired in air at 350 and 450 °C, using Zr(OH)4 sol based on formic acid (HCOOH) solution, are amorphous and approximately 9–10 nm thick. Crystallization occurs at first at 550 °C as amorphous/tetragonal (011), and finally, at 700 °C, the ZrO2 film crystallizes into tetragonal (011)/monoclinic ($\bar{1}11$) and (111) structures. The temperature-programmed desorption curve is separated into five distinct H2O desorption components caused by physisorbed H2O, chemisorbed OH, and Zr–OH bonds in the ZrO2 film, and a model is proposed to explain the mechanism of H2O desorption. Thus, H2O desorption and crystallization processes in the ZrO2 film are clarified: consequently the relationships between the film packing density and electrical characteristics are optimized. On the basis of capacitance–voltage characteristics, the dielectric constant (relative permittivity; $\varepsilon_{\text{ZrO$_{2}$}}$) of the sol–gel-derived ZrO2 film fired at 550 °C was calculated to be 12, which is much higher than that of silicon dioxide (SiO2; 3.9).

• 2009-10-25

著者

• Nishide Toshikazu

  College Of Engineering Nihon University

• Ikeda Masanori

  College Of Engineering Nihon University

• Shimizu Hirofumi

  College of Engineering, Nihon University, 1 Aza-Nakagawara, Tokusada, Tamura-machi, Koriyama, Fukushima 963-8642, Japan

• Konagai Satoshi

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

• Nishide Toshikazu

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

• Ikeda Masanori

  College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

関連論文

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• Scanning Tunneling Microscopy of Si(100)-C(4×4) Reconstructed Structure Formed by Ethylene Exposure : Surfaces, Interfaces, and Films
• Schottky-barrier-induced AC surface photovoltages in Au-precipitated n-type Si(001) surfaces
• Characterization of Sol–Gel Derived and Crystallized ZrO2 Thin Films
• Temperature-Programmed Desorption Analyses of Sol–Gel Deposited and Crystallized HfO2 Films
• Erratum: ``Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces''
• Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air
• Material Microcharacterization of Sol–Gel Derived HfO2 Thin Films on Silicon Wafers
• Direct Observation of Au Nanoclusters at Au/Si Interface and Enhanced SiO

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