Scanning Tunneling Microscopy of Si(100)-C(4×4) Reconstructed Structure Formed by Ethylene Exposure : Surfaces, Interfaces, and Films

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概要

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• Si(100) surfaces exposed to ethylene (C_2H_4) at 700℃ were observed using a scanning tunneling microscope (STM). For surfaces exposed to 10L (1L = 1.3×10^<-4>Pa・s) of C_2H_4, irregular dots appeared in Si dimer rows, and lines of continuous missing dimers appeared that were aligned perpendicular to the Si dimer rows. With increasing C_2H_4 exposure, densities of both their regular dots and the continuous missing dimers, as well as the length of the missing dimer rows, increased. For surfaces exposed to 100L of C_2H_4, part of the Si(100)-(2×1) surface was reconstructed to a c(4×4) structure. The c(4×4) domain was located preferentially at the atomic step of a terrace and grew in the direction of the dimer rows in a (2×1) structure. The c(4×4) structure basically consisted of two distinct subunits.

• 社団法人応用物理学会の論文
• 2001-12-15

著者

• Ikeda Masanori

  College Of Engineering Nihon University

• NAGASHIMA Naoyuki

  College of Engineering, Nihon University

• Nagashima N

  College Of Engineering Nihon University

• Nagashima Naoyuki

  College Of Engineering Nihon University

関連論文

• Characteristics of Sol–Gel-Derived and Crystallized HfO2 Thin Films Dependent on Sol Solution
• Scanning Tunneling Microscopy of Si(100)-C(4×4) Reconstructed Structure Formed by Ethylene Exposure : Surfaces, Interfaces, and Films
• Characterization of Sol–Gel Derived and Crystallized ZrO2 Thin Films
• Temperature-Programmed Desorption Analyses of Sol–Gel Deposited and Crystallized HfO2 Films

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