Effect of Target--Substrate Distance on the Properties of Hetero Facing Target Sputtered Al--Ga--Zn--O Films
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概要
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We investigated the effects of facing target--substrate distance (TSD) on the electrical, optical, structural and morphological properties of Al--Ga--Zn--O (AGZO) films grown by linear facing target sputtering (LFTS) at room temperature to optimize the TSD. Although the optimal TSD for depositing an AGZO film was 3 cm, based on figure of merit values, a longer TSD prevents plasma damage of the AGZO films. The AGZO film sputtered under optimized conditions had a sheet resistance of 132 Ohm/square and an optical transmittance of 87.2%. Based on the electrical, optical, structural, and surface properties of AGZO films grown at different TSDs, we suggest a possible mechanism to explain the effects TSD on properties of hetero-sputtered AGZO films prepared by LFTS process.
- 2013-07-25
著者
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Kim Han-Ki
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea
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Seo Ki-Won
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea
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Shin Hyun-Su
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea
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Lee Ju-Hyun
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea
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