Physical Properties of Amorphous In--Ga--Zn--O Films Deposited at Different Sputtering Pressures
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概要
- 論文の詳細を見る
The physical properties of amorphous In--Ga--Zn--O (a-IGZO) films deposited by DC sputtering under various sputtering pressures were investigated. The sputtering pressure was found to influence various physical properties. Lower sputtering pressures resulted in film densification and decreased both surface roughness and hydrogen concentration. In addition, transistor performance characteristics such as saturation mobility and sub-threshold swing improved as the sputtering pressure decreased. These results yield insight into the correlation between thin film transistor (TFT) performance and deposition conditions.
- 2013-03-25
著者
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Kugimiya Toshihiro
Electronics And Information Technology Laboratory Kobe Steel Ltd.
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Kita Takashi
Department Of Anesthesiology Osaka Police Hospital
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Morita Shinya
Electronics Research Laboratory, Kobe Steel, Ltd., Kobe 651-2271, Japan
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Hino Aya
Electronics Research Laboratory, Kobe Steel, Ltd., Kobe 651-2271, Japan
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Hayashi Kazushi
Electronics Research Laboratory, Kobe Steel, Ltd., Kobe 651-2271, Japan
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Yasuno Satoshi
Electronics Division, KOBELCO Research Institute, Inc., Kobe 651-2271, Japan
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Kita Takashi
Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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