A Subthreshold Swing Model for Fully-Depleted Silicon-on-Insulator Metal--Oxide--Semiconductor Field Effect Transistors with Vertical Gaussian Profile
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概要
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A compact subthreshold swing model is proposed for the short-channel fully-depleted (FD) silicon-on-insulator (SOI) metal--oxide--semiconductor field effect transistors (MOSFETs) with vertical Gaussian doping profile in this paper. Considering the channel potential which is influenced by the non-uniform doping profile, the model is derived by using the concept of effective conduction path effect (ECPE). The validity of the proposed model is shown by comparing the calculated results with the Sentaurus technology computer-aided design (TCAD) numerical simulation data. The model is believed to provide a better physical insight and understanding of FD SOI MOSFETs with a non-uniform doping profile operating in the subthreshold regime.
- 2013-01-25
著者
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LIANG Feng
School of Electronic & Information Engineering, Xian Jiaotong University
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Liang Feng
School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China
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Chen Kebin
School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China
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Zhang Guohe
School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China
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Li Zunchao
School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China
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Zheng Xue
School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China
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