A novel single event upset hardened CMOS SRAM cell

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概要

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• This paper presents an improved design of a radiation-hardened static random access memory (SRAM). The simulation results based on the 0.18µm standard digital CMOS technology show that its static current drops dramatically compared with the WHIT cell, and the write speed is equivalent to that of other cells. The memory cell is extremely tolerant to logic upset as it does not flip even for a transient pulse with 100 times the critical charge of the ROCK cell. According to these features, this novel cell suits high reliability applications, such as aerospace and military.

著者

• LIANG Feng

  School of Electronic & Information Engineering, Xian Jiaotong University

• Zhang Guohe

  School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China

• Liang Feng

  School of Electronic and Information Engineering, Xi'an Jiaotong University

• Shao Jun

  School of Electronic and Information Engineering, Xi'an Jiaotong University

• Bao Dongxuan

  School of Electronic and Information Engineering, Xi'an Jiaotong University

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