A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal--Oxide--Semiconductor Field Effect Transistors with Vertical Gaussian Profile
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概要
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A subthreshold current of fully-depleted (FD) silicon-on-insulator (SOI) metal--oxide--semiconductor field effect transistors (MOSFETs) with vertical Gaussian profile is presented in the paper. The model is based on analytical approximated solution of two-dimensional Poissons' equation and Boltzmann transport equation. The front and the back channel currents are effectively derived using a novel inversion layer model and the boundary conditions which take the nonuniform doping into account. The results are matched well with the numerical simulation results obtained by Sentaurus Technology Computer-Aided Design (TCAD). The model is believed to provide a deep physical insight and understanding of FD-SOI MOSFETs with a non-uniform doping profile operating in the subthreshold regime.
- 2012-02-25
著者
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LIANG Feng
School of Electronic & Information Engineering, Xian Jiaotong University
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Liang Feng
School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China
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Zhang Guohe
School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China
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Chen Kebin
School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China
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Chen Kebin
School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China
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Zhang Guohe
School of Electronic and Information Engineering, Xi'an Jiaotong University, Shaanxi 710049, China
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- A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal--Oxide--Semiconductor Field Effect Transistors with Vertical Gaussian Profile