Electrical Characteristics of Pt Schottky Contacts Fabricated on Amorphous Gallium Indium Zinc Oxides

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概要

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• The electrical characteristics of Pt Schottky diodes fabricated on amorphous gallium indium zinc oxide were investigated. On the basis of Schottky theory with the thermionic emission mode, an effective Schottky barrier height (SBH) of 0.55 eV and an ideality factor of 3.38 were obtained. The anomalously high ideality factor could be attributed to the statistical potential variations of conduction band edges, as evidenced from the distinctive carrier transport through percolation hopping conduction. In this respect, the barrier inhomogeneity model was applied to obtain reasonable Schottky parameters, yielding the mean barrier height of 1.23 eV with a large standard deviation of 192 mV.

• 2011-10-25

著者

• Kim Kyoung-kook

  Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist)

• Kim Hyunsoo

  School Of Mechanical Engineering Sungkyunkwan University

• LEE Sung-Nam

  Department of Materials Sciencecs and Engineering & Center for Electronic Materials Research, Kwangj

• Ahn Kwang-Soon

  School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Korea

• Lee Sung-nam

  Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793, Korea

• Kim Seongjun

  School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Chonbuk 561-756, Korea

• Kim Hyunsoo

  School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Chonbuk 561-756, Korea

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