Carrier Transport and Effective Barrier Height of Low Resistance Metal Contact to Highly Mg-Doped p-GaN

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概要

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• The effective barrier height and carrier transport mechanism of low resistance Ag-based contact to highly Mg-doped p-GaN were investigated. The specific contact resistance obtained was as low as $7.0\times 10^{-4}$ $\Omega$ cm2. The electrical resistivity of p-GaN was found to increase depending on ${\sim}T^{-1/4}$, indicating variable-range hopping (VRH) conduction through Mg-related deep-level defects. Based on the VRH conduction model, the effective barrier height for carrier transport could be measured as 0.12 eV, which is low enough to explain the formation of excellent ohmic contact. The deep-level defects were also found to induce surface Fermi pinning.

• 2011-08-25

著者

• Kim Hyunsoo

  School Of Mechanical Engineering Sungkyunkwan University

• Park Youngjun

  School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea

• Park Youngjun

  School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea

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