Substantial Pinning of the Fermi Level of Plasma-Treated n-Type GaN Surfaces

スポンサーリンク

概要

• 論文の詳細を見る

• The Schottky barrier height of plasma-treated n-type GaN was investigated according to the work functions of metals including Cu, Au, and Pt. The extracted $S$-parameter was as low as 0.17, and the density of surface states was as high as $5.4\times 10^{13}$ states/(cm2$\cdot$eV), indicating substantial pinning of the Fermi level on plasma-treated n-type GaN surfaces.

• 2011-01-25

著者

• Kim Hyunsoo

  School Of Mechanical Engineering Sungkyunkwan University

• Park Youngjun

  School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea

関連論文

• BCD-10 ANALYSIS OF RUBBER BELT CVT WITH MECHANICAL ACTUATORS(BELT AND CHAIN DRIVES)
• BCD-2 MODEL BASE CONTROL OF A METAL BELT CVT AND IMPROVEMENT OF SHIFT SPEED(BELT AND CHAIN DRIVES)
• Carrier Transport and Effective Barrier Height of Low Resistance Metal Contact to Highly Mg-Doped p-GaN
• Substantial Pinning of the Fermi Level of Plasma-Treated n-Type GaN Surfaces
• Schottky Barrier Height and S-Parameter of Ti, Cu, Pd, and Pt Contacts on p-Type GaN (Special Issue : Advanced Electromaterials)
• Carrier Transport Mechanism of a Low Resistance Ti/Al Ohmic Contact on (11\bar{2}2) Semipolar n-Type GaN
• Electrical Characteristics of Pt Schottky Contacts Fabricated on Amorphous Gallium Indium Zinc Oxides

スポンサーリンク