Carrier Transport Mechanism of a Low Resistance Ti/Al Ohmic Contact on (11\bar{2}2) Semipolar n-Type GaN

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概要

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• The carrier transport mechanism of a low resistance Ti/Al Ohmic contact to (11\bar{2}2) semipolar n-type GaN grown on m-plane sapphire substrate was investigated. Thermal annealing led to an excellent Ohmic contact with a specific contact resistance of 3.2 \times 10^{-4} \Omega cm2. Current--voltage--temperature measurements revealed insignificant changes in the specific contact resistance with respect to temperature, which is evidence of a tunneling transport. Based on the thermionic field emission model, a very low Schottky barrier height of 3 meV and barrier width of 1 nm were obtained due to increased interfacial carriers of 9.2 \times 10^{18} cm-3, resulting in excellent Ohmic contact to semipolar n-type GaN.

• 2012-06-25

著者

• Kim Hyunsoo

  School Of Mechanical Engineering Sungkyunkwan University

• LEE Sung-Nam

  Department of Materials Sciencecs and Engineering & Center for Electronic Materials Research, Kwangj

• Ahn Kwang-Soon

  School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Korea

• Lee Sung-Nam

  Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793, Republic of Korea

• Kim Hyunsoo

  School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea

• Jung Sungmin

  School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea

• AHN Kwang-soon

  School of Chemical Engineering, Yeungnam University

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